• IRIS Scan of a-Si QE Mapped Cell QE Maps of an a-Si Cell (40 sites/ minute!)

    Mapped at 40 sites/ minute. Full spectrum acquired at each site.

    FlashQE Mapping of a-Si
  • Light Biasing used to Study Triple Junction Cell, Inverted MM

    Triple Junction QE: Inverted MM

    Solid line: monochromator QE system (>10 min)
    Dashed line: Tau Science FlashQE (4 sec)

    Flash QE on Triple Junction Cell
  • FlashQE_ani

    Electroluminescence Image of Cell:

    Electroluminescence Image of the c-Si Cell

    In UV (λ = 390nm), ~7% QE Enhancement is seen at the wafer edge. Absorption depth: 0.1 μm

    Slice through mapping data set at 370nm

    FlashQE Mapping of c-Si
  • Since FlashQE acquires spectra is real-time, it can be used for novel applications such as monitoring the evolution of spectral response during a temperature ramp. These are results from a 60 second measurement, warning the sample from 25-43C.

    Band Edge Redshift resolved: 1.2-1.8 meV/C
    Band Edge Redshift resolved: 1.2-1.8 meV/C
    Wavelength Resolved QE temp coefficient
    Wavelength Resolved QE temp coefficient
    As Temp rises:
    The bandgap narrows (Varshni Equation) causing QE to increase near the band gap:
    The overlayer (Nitride) absorption redshifts causing QE to decrease in the UV
    Temperature Coefficient
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